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As one of the most important compound semiconductor materials, InP indium phosphide single crystal material is the key material for the production of InP-based laser diodes (LDs), light-emitting diodes (LEDs) and photodetectors in optical communications. These devices realize optical fiber communications. Information transmission, dissemination, amplification, reception and other functions.
Product Description
As one of the most important compound semiconductor materials, InP indium phosphide single crystal material is the key material for the production of InP-based laser diodes (LDs), light-emitting diodes (LEDs) and photodetectors in optical communications. These devices realize optical fiber communications. Information transmission, dissemination, amplification, reception and other functions.
InP is also very suitable for high-frequency devices, such as high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT), etc. Due to its superior characteristics, it is used in optical fiber communication, microwave, millimeter wave, anti- Radiation solar cells, heterojunction transistors and many other high-tech fields have a wide range of applications .
The main growth methods of InP single crystal materials include traditional liquid seal Czochralski technology (LEC), improved LEC technology, gas pressure controlled Czochralski technology (VCZ/PC-LEC)/vertical gradient solidification technology (VGF)/vertical bridge Man Technology (VB), etc.
Product parameters
| single crystal | doping | conductivity type | Carrier concentrationcm-3 | Mobility (cm2/Vs) | Dislocation density (cm-2) | standard substrate |
| InP | Intrinsic | N | (0.4-2) x 10 16 | (3.5-4) x 10 3 | £ 5 x 10 4 | Φ2″×0.35mmΦ3″×0.35mm |
| InP | S | N | (0.8-3) x 10 18(4-6)´10 18 | (2.0-2.4) x 10 3(1.3-1.6) x 10 3 | £ 3 x 10 4£ 2 x 10 3 | Φ2″×0.35mmΦ3″×0.35mm |
| InP | Zn | P | (0.6-2) x 10 18 | 70-90 | £ 2 x 10 4 | Φ2″×0.35mmΦ3″×0.35mm |
| InP | Te | N | 107-10 8 | ³ 2000 | £ 3 x 10 4 | Φ2″×0.35mmΦ3″×0.35mm |
| Dimensions (mm) | Dia50.8x0.35mm, 10×10×0.35mm, 10×5×0.35mm can be customized for special substrates | |||||
| structure | Cubic, a=5.869 Aa=5.869A | |||||
| crystal direction | <100> | |||||
| melting pointoC | 1600℃ | |||||
| densityg/cm3 | 4.79 g/ cm3 | |||||
| Bandgap width | 1.344 | |||||
| Surface roughness | Ra:≦ 1nm can provide atomic particle microscope (AFM) test report | |||||
| polishing | single or double sided | |||||
| Package | Class 100 clean bag, Class 1000 ultra-clean room | |||||
